Vapour phase epitaxial grown GaAs films with a very low deep level concentration-Reference-Cited by-同舟云学术

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Vapour phase epitaxial grown GaAs films with a very low deep level concentration

Published:1995-01 Issue:1-4 Volume:146 Page:246-250
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chaldyshev V.V.,Astrova E.V.,Lebedev A.A.,Bobrovnikova I.A.,Chernov N.A.,Ivleva O.M.,Lavrentieva L.G.,Teterkina I.V.,Vilisova M.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Electrical properties of indium doped GaAs layers grown by MBE

2. High quality epitaxial GaAs and InP wafers by isoelectronic doping

3. Indium Isoelectronic Doping Influence on Etch Pit Density in GaAs Layers Grown by Vapour Phase Epitaxy

4. Growth of Epitaxial Layers of In Doping GaAs by the Vapour-Phase Epitaxial Trichloride Method Using a Gallium-Indium Alloyed Source

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates;Semiconductors;1997-12

2. Formation of n+-Layers in Undoped and Indium-Doped GaAs Wafers by Si and Si+P Ion Implantation;physica status solidi (a);1997-09

3. Influence Of Donor, Acceptor, And Isovalent Impurity Doping On Arsenic Excess And Point Defects In Low Temperature Grown GaAs;MRS Proceedings;1996

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