Modelling of the growth of GaAs by the LEC technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals
2. The theory and practice of dislocation reduction in GaAs and InP
3. Formation of dislocations during liquid encapsulated Czochralski growth of GaAs single crystals
4. The role of crystal diameter and impurity hardening on the threshold for dislocation formation in LEC GaAs
5. Finite Element Analysis of a Thermal‐Capillary Model for Liquid Encapsulated Czochralski Growth
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1. Liquid-Encapsulated Czochralski Bulk Flow with Flow Visualization;Magnetic Convection;2005-07
2. Thermal stress inhibition in double crucible Czochralski large diameter crystal growth;Journal of Crystal Growth;2005-01
3. Transport Phenomena in Czochralski Crystal Growth Processes;Advances in Heat Transfer;1997
4. Research in real time of some thermal and mass growth parameters of BGO and BSO crystals during the Czochralski process with weight diameter control;Journal of Materials Science;1996
5. Numerical computation of liquid enchapsulated czochralski bulk flow in comparison with flow visualization.;JOURNAL OF CHEMICAL ENGINEERING OF JAPAN;1994
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