Low-temperature heteroepitaxial growth of Si on Sapphire by disilane gas-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Epitaxial Growth of SOS Films with Amorphous Si Buffer Layer
2. Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
3. Growth and properties of Si films on sapphire with predeposited amorphous Si layers
4. Deposition of a Si monolayer on sapphire using an ArF excimer laser for Si epitaxial growth
5. Growth of thin silicon films on sapphire and spinel by molecular beam epitaxy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Production, Characterization and Application of Silicon-on-Sapphire Wafers;Key Engineering Materials;2010-06
2. Structural properties of carbon films deposited by pulsed ArF laser ablation: effects of substrate temperature, bias and H2 pressure;Materials Science and Engineering: B;1998-08
3. Characterization of Interface Layer of Silicon on Sapphire Using Spectroscopic Ellipsometry;Japanese Journal of Applied Physics;1997-12-15
4. Influence of thickness distribution on spectroscopic ellipsometry of SOS;Surface Science;1997-05
5. Epitaxial growth of SiGe on Al2O3 using Si2H6 gas and Ge solid source molecular beam epitaxy;Journal of Crystal Growth;1996-12
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