Characterization of Interface Layer of Silicon on Sapphire Using Spectroscopic Ellipsometry
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Published:1997-12-15
Issue:Part 1, No. 12A
Volume:36
Page:7152-7155
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Jayatissa Ahalapitiya Hewage,Yamaguchi Tomuo,Sawada Kazuaki,Aoyama Mitsuru,Sato Fumio
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering