MBE of Pb1−xEuxSe for the use in IR devices-Reference-Cited by-同舟云学术

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MBE of Pb1−xEuxSe for the use in IR devices

Published:1987-02 Issue:1-4 Volume:81 Page:405-410
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Norton P.,Tacke M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Quantum well diode lasers of lead-europium-selenide-telluride

2. R. Rosman, A. Katzir, P. Norton, K.-H. Bachem and H. Preier, submitted.

3. MBE - a tool for fabricating IV–VI diode lasers;Bachem,1984

4. Lead-europium-selenide-telluride grown by molecular beam epitaxy

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