LPE growth of GaInAsSb/GaSb system: The importance of the sign of the lattice mismatch
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference37 articles.
1. Phase equilibria in III–V quaternary systems—application to Al-Ga-P-As
2. The problem of substrate dissolution in LPE of III–V compounds in the simple solution approximation; Application to the InxGa1−xAsyP1−y/InP system
3. Experimental examination of gaas dissolution in in-p melt
4. Isothermal contact of III–V saturated solutions with different III-V substrates: Two mode of behavior
5. Instability of “slow” solid-liquid interface relaxation before the hetero-LPE of III-V compounds
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1. Determination of lateral strain in InGaAsSb alloys and its effect on structural and optical properties;Journal of Materials Science;2023-10-30
2. Structural characterization of AlxGa1−xSb grown by LPE;Materials Science in Semiconductor Processing;2012-10
3. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04
4. Structural characterization of AlxGa1−xSb films grown at low temperatures by liquid phase epitaxy;Thin Solid Films;2005-05
5. Ternary and quaternary alloy III–V antimonide (InAsSb and InAsSbP) virtual substrates made by liquid-phase epitaxy;IEE Proceedings - Optoelectronics;2003
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