Isothermal contact of III–V saturated solutions with different III-V substrates: Two mode of behavior
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
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1. References;Single Crystal Growth of Semiconductors from Metallic Solutions;2007
2. Investigations on the undersaturated liquid phase epitaxial growth of AlxGa1−xAs;Journal of Crystal Growth;2000-01
3. A numerical analysis for the conversion phenomenon of GaAs to GaAsP on a GaP substrate in an LPE system;Journal of Crystal Growth;1996-12
4. Conversion from GaAs to GaAsP by Annealing a GaAs Layer on GaP in Ga-As-P Solution;Japanese Journal of Applied Physics;1993-08-15
5. Conversion of GaAs Layer Grown on GaP Substrate to GaAsP in LPE System;Japanese Journal of Applied Physics;1993-01-01
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