Use of precision density and lattice parameter measurements for study of point defects in single crystals of semiconductors-Reference-Cited by-同舟云学术

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Use of precision density and lattice parameter measurements for study of point defects in single crystals of semiconductors

Published:1986-06 Issue:3 Volume:75 Page:491-496
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Morozov A.N.,Bublik V.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. Precision lattice constant determination

2. Measurements of the Elementary Cell Parameters by a One-Crystal Spectrometer;Lisoivan,1982

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Precise determination of crystal lattice parameters;Physics-Uspekhi;2020-09-01

2. A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III–V semiconductors;Journal of Applied Physics;2010-06-15

3. Point defects in compound semiconductors;Crystal Growth - From Fundamentals to Technology;2004

4. Charged native point defects in GaAs and other III–V compounds;Journal of Crystal Growth;2002-04

5. A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide;Journal of Applied Physics;1999-05-15

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