Tunnelling spectroscopy of CdxHg1−xTe detectors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Properties of ion-implanted junctions in mercury—cadmium—telluride
2. Field induced tunneling in Hg1−xCdxTe photodiodes
3. Effect of trap tunneling on the performance of long-wavelength Hg1-xCdxTe photodiodes
4. Electrical properties of infrared photovoltaic CdxHg1−xTe detectors
5. Tunneling effect in CdxHg1-xTe photodiodes
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1. Room temperature characterization of Hg1-xCdxTe P-on-n heterostructure photodiodes;Journal of Electronic Materials;1995-05
2. GaAs/AlGaAs quantum well infrared photoconductors versus HgCdTe photodiodes for long-wavelength infrared applications;Optical Engineering;1994-05-01
3. GaAs/AlGaAs QWIPs vs HgCdTe Photodiodes for LWIR Applications;Quantum Well Intersubband Transition Physics and Devices;1994
4. Comment on ‘‘Performance limitations of GaAs/AlGaAs infrared superlattices’’ [Appl. Phys. Lett.54, 2704 (1989)];Applied Physics Letters;1990-06-04
5. Diluted magnetic semiconductors based on II–VI compounds for photovoltaic detector applications;Infrared Physics;1990-01
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