Field induced tunneling in Hg1−xCdxTe photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93372
Reference12 articles.
1. Tunneling in field induced diode in indium antimonide
2. Properties of ion-implanted junctions in mercury—cadmium—telluride
3. Improved performance of implanted n+-p Hg1-xCdxTe photodiodes using insulated field plates
4. Evidence for States (Bands) in the Forbidden Gap of Degenerate GaAs and InP—Secondary Tunnel Currents and Negative Resistances
5. Excess and Hump Current in Esaki Diodes
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1. Deep level in the InAs/InAsSb superlattice revealed by forward-bias tunneling;Journal of Applied Physics;2023-10-06
2. The Charge Carrier Transport Mechanisms in the Diffusion n–p Junctions Based on MBE CdxHg1—xTe;physica status solidi (a);1999-10
3. Experimental evidence for the transition of different indirect tunneling processes in p-HgCdTe;Applied Physics Letters;1998-03-16
4. Identification of trap-assisted tunnelling in a constant-current mode in HgCdTe photodiodes;Semiconductor Science and Technology;1996-12-01
5. Field-extended field-effect transistors in 0.25-eV bandgap HgCdTe;IEEE Transactions on Electron Devices;1993-03
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