Preparation of Hg1−x−yCdxMnyTe crystals by isothermal growth method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Proc. 4th Intern. Conf. on the Physics of Narrow Gap Semiconductors;Kim,1982
2. Energy band gaps of HgxCdyMnzTe (x +y +z = 1) epitaxial layers
3. Croissance épitaxique de composés semiconducteurs par évaporation-diffusion en régime isotherme
4. Proc. 6th School on Physics and Applications of Crystals and Liquid Crystals;Piotrowski,1983
5. Isothermal growth of homogeneous Hg1−x−yCdxMnyTe crystals
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1. Unstable mixing regions in CdMnHgTe and ZnMnHgTe solid solutions;Journal of Alloys and Compounds;2006-10
2. Unstable mixing regions in II-VI quaternary solid solutions;Semiconductor physics, quantum electronics and optoelectronics;2005-12-15
3. Growing Cd1-x-yMnyHgxTe single crystals and their optoelectronic properties;Semiconductor Physics, Quantum Electronics and Optoelectronics;2003-06-16
4. Mass flux, Crystal composition and Solid solubility studies of the Hg1−xMnxTe-HgI2 vapor transport system;Journal of the Less Common Metals;1989-12
5. II-VI — Semiconductors: Particular features and applications;Annales des Télécommunications;1988-07
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