Formation of p on n photodiodes in Hg1−xCdxTe by ion implantation and cw CO2 laser annealing
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Annealing of Hg1−xCdxTe: Hg loss rates and annealing of ion implantation damage
2. Structure of ion‐implanted and annealed Hg1−xCdxTe
3. Boron ion implantation in Hg1−xCdxTe
4. Ion implantation doping of Cd0.2Hg0.8Te for infrared detectors
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Multi-step rapid thermal annealing of boron and indium implanted Hg1−xCdxTe;Journal of Electronic Materials;1994-11
2. Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage;Critical Reviews in Solid State and Materials Sciences;1994-01
3. Electrical activation of B implants in Hg0.79Cd0.21Te by immersion annealing in a hot Hg bath;Applied Physics Letters;1989-09-11
4. (111) random and 〈110〉 channeled implantation profiles and range parameters in Hg1−xCdxTe;Journal of Applied Physics;1988-06
5. Intrinsic infrared detectors;Progress in Quantum Electronics;1988-01
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