LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (λg < 1.2 μm) for optical waveguide applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. InP electro‐optic directional coupler
2. High speed III-V electrooptic waveguide modulators at lambda -1.3 mu m
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5. 1.2–1.6 μm GaxIn1−xAsyP1−y-InP DH lasers grown by LPMOCVD
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
2. Growth of 1.55 μm DH laserstructures using TBAs and TBP in MOMBE;Journal of Crystal Growth;1997-01
3. Interface optimization of GaInAs/GaInAsP (λ = 1.3 mm) superlattices by the use of growth interruptions;Journal of Crystal Growth;1992-11
4. Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration;Journal of Crystal Growth;1992-05
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