The effect of temperature on the epitaxial quality of bilayers of iridium silicide and SiGe deposited on Si(100) in ultrahigh vacuum
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
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1. Amorphous-crystalline transition at the Ir/Si(100) interface;Journal of Applied Physics;2003-05-15
2. Solid state amorphization at the room temperature deposited Ir/Si interface;Journal of Applied Physics;2002-02
3. Electrical properties of Ir-silicide formation on p-Si(100) in ultra-high vacuum;Thin Solid Films;2000-09
4. Reactive co-evaporation of Si and Ge in oxygen atmospheres;Thin Solid Films;1999-04
5. The effect of Si/Ir codeposition ratio on the Ir silicide/Si(100) interface roughness;Materials Chemistry and Physics;1996-02
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