Vapor-phase-epitaxial growth of n-AlAs/p-GaAs solar cells-Reference-Cited by-同舟云学术

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Vapor-phase-epitaxial growth of n-AlAs/p-GaAs solar cells

Published:1977-07 Issue:1 Volume:39 Page:117-127
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Johnston W.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Proc. 1973, Photovoltaic Specialists Conf.;Loferski,1973

2. LPE growth of GaAs-Ga1-xAlxAs solar cells

3. GaAs concentrator solar cell

4. Proc. 1975, Photovoltaic Specialists Conf.;James,1976

5. Definition Report ERDA-49,1975

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 28.3% Efficient III–V Tandem Solar Cells Fabricated Using a Triple‐Chamber Hydride Vapor Phase Epitaxy System;Solar RRL;2021-12-19

2. Topical review: pathways toward cost-effective single-junction III–V solar cells;Journal of Physics D: Applied Physics;2021-12-03

3. Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy;ACS Applied Energy Materials;2019-12-12

4. Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy;IEEE Journal of Photovoltaics;2017-01

5. Heteroepitaxy of GaAs on (001) ⇒ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy;Journal of Applied Physics;2013-05-07

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