Chemical beam epitaxy of GaInP on GaAs(100) substrates and its application to 0.98 μm lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. High‐quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low‐pressure metalorganic chemical vapor deposition
2. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
3. Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition
4. Metalorganic molecular‐beam epitaxy of InGaP
5. Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures: growth kinetics, electrical and optical properties
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chemical Beam Epitaxial Growth of InP and GaP by Using Tertiarybutylbis (Dimethylamino) Phosphine;Journal of the Korean Physical Society;2007-12-15
2. Chemical beam epitaxial growth of GaInP using uncracked trisdimethylaminophosphine;Journal of Materials Science;2006-10-20
3. Chemical beam epitaxial growth of GaInP using TBP, TIPGa and EDMIn;Journal of Materials Science;2003
4. Optimized electrolyte for electrochemical capacitance-voltage profiling of carrier concentration in In0.49Ga0.51P;Journal of Electronic Materials;1999-12
5. Spatial composition dependence in InGaP growth on pre-patterned GaAs substrates by chemical beam epitaxy;Journal of Crystal Growth;1999-06
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