New metalorganic gallium precursors for the growth of GaAs and AlGaAs by CBE-Reference-Cited by-同舟云学术

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New metalorganic gallium precursors for the growth of GaAs and AlGaAs by CBE

Published:1992-11 Issue:1-4 Volume:124 Page:81-87
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jones A.C.,Lane P.A.,Martin T.,Freer R.W.,Calcott P.D.J.,Houlton M.R.,Whitehouse C.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Proc. 2nd Intern. Conf. on Chemical Beam Epitaxy and Related Growth Techniques,1990

2. The role of aluminum and hydrogen in impurity contamination of AlGaAs grown by MOMBE

3. Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane

4. Carbon incorporation in AlGaAs grown by CBE

5. The search for all-hydride MOMBE: examination of trimethylamine alane, trimethylamine gallane, and arsine

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