Optical characterization of MOVPE grown GaInP layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Very low threshold current AlGaInp/GaxIn1−xP strained single quantum well visible laser diode
2. High-power CW operation of broad area InGaAlP visible light laser diodes
3. 1W CW, 672 nm visible laser diodes
4. High power, 8.5 W CW, visible laser diodes
5. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
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4. Photoluminescence upconversion atGaAs/InGaP2interfaces driven by a sequential two-photon absorption mechanism;Physical Review B;2016-06-09
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