Reproducible growth of InAsxSb1−x/InSb strained-layer superlattice photodiodes by low pressure MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. The Preparation of InAsSb/InSb SLS and InSb Photodiodes by MOCVD
2. MOCVD-grown InAsSb strained-layer superlattice infrared detectors with photoresponses ⩾10μm
3. Fermi level dependent native defect formation: Consequences for metal–semiconductor and semiconductor–semiconductor interfaces
4. Doping-induced suppression of dislocation formation in semiconductors
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2. Strain-balanced InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
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4. Surface decomposition of triethylindium on InSb(100);Surface Science;2001-09
5. Carbon doping of InSb using CBr4 during growth by gas-source molecular beam epitaxy;Applied Physics Letters;1998-03-09
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