X-ray diffuse scattering identification of interstitial atom aggregates in Si-doped GaAs single crystals-Reference-Cited by-同舟云学术

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X-ray diffuse scattering identification of interstitial atom aggregates in Si-doped GaAs single crystals

Published:1989-09 Issue:2 Volume:97 Page:475-482
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Morozov A.N.,Bublik V.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Fizika Kristallisatsii;Milvidskii,1986

2. Si-defect concentrations in heavily Si-DOPED GaAs: annealing-Induced changes-II

3. Structural Defects in Single Crystals of Semiconductors;Milvidskii,1984

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1. Optoelectronic properties of high-Si-content-Ge1−x–y Si x Sn y /Ge1−x Sn x /Ge1−x–y Si x Sn y double heterostructure;Semiconductor Science and Technology;2018-11-16

2. Hydrogen-surfactant-mediated epitaxy of Ge1−xSnxlayer and its effects on crystalline quality and photoluminescence property;Japanese Journal of Applied Physics;2016-12-02

3. Dynamical theoretical model of the high-resolution double-crystal x-ray diffractometry of imperfect single crystals with microdefects;Physical Review B;2008-12-30

4. Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property;Acta Physica Sinica;2007

5. Incorporation of dopant atoms and defects in semiconductors: a microscopic view;Physica B: Condensed Matter;2003-12

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