Optoelectronic properties of high-Si-content-Ge1−x–y Si x Sn y /Ge1−x Sn x /Ge1−x–y Si x Sn y double heterostructure
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aaebb5/pdf
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1. Silicon photonics for next generation system integration platform
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