Epitaxial growth of highly Fe-doped semi-insulating InP layers by N2 carrier gas mixed hydride vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Activation ratio of Fe in Fe‐doped semi‐insulating InP epitaxial layers grown by liquid phase epitaxy and metalorganic chemical vapor deposition
2. Growth of Fe-doped semi-insulating InP by MOCVD
3. Electrical characterization of Fe‐doped semi‐insulating InP grown by metalorganic chemical vapor deposition
4. MOVPE growth and characteristics of Fe-doped semi-insulating InP layers
5. Semi-insulating InP grown by low pressure MOCVD
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication and I-V-T behaviour of GaInP : structures;Journal of Crystal Growth;1997-08
2. Hydride vapor phase epitaxy revisited;IEEE Journal of Selected Topics in Quantum Electronics;1997-06
3. Hydride-VPE growth of InP and SI InP: Fe in H2/N2 ambient;Journal of Crystal Growth;1993-03
4. Growth of semi-insulating InP: Fe in the low pressure hydride VPE system;Journal of Crystal Growth;1992-07
5. Relationship between dislocation generation, vapour phase supersaturation and growth rate in InP layers obtained by vapour phase epitaxy;Materials Science and Engineering: B;1991-11
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