Activation ratio of Fe in Fe‐doped semi‐insulating InP epitaxial layers grown by liquid phase epitaxy and metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97845
Reference6 articles.
1. Optical and ESR analysis of the Fe acceptor in InP
2. Semi-insulating properties of Fe-doped InP
3. Growth of Fe-doped semi-insulating InP by MOCVD
4. The identification of precipitate phases in Fe-doped InP single crystals
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1. Rapid thermal low-pressure metal organic chemical vapor deposition of Fe-doped InP layers;Applied Physics Letters;2002-01-21
2. Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe;Journal of Electronic Materials;2001-08
3. High Fe2+/3+ trap concentration in heavily compensated implanted InP;Applied Physics A Materials Science & Processing;2001-07
4. Resistivity analysis on n-semi-insulating-n and p-semi-insulating-p structures exemplified with semi-insulating InP;Journal of Applied Physics;2001-04
5. High-resistance buried layers by MeV Fe implantation in n-type InP;Applied Physics Letters;1999-08-02
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