Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy-Reference-Cited by-同舟云学术

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Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy

Published:1989-09 Issue:2 Volume:97 Page:303-309
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nakamura Shuji,Sakai Shiro,Chang Shi S.,Ramaswamy Ramu V.,Kim Jae-Hoon,Radhakrishnan Gouri,Liu John K.,Katz Joseph

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs‐coated silicon by molecular beam epitaxy

2. Growth of GaAs on GaAs‐coated Si by liquid‐phase epitaxy

3. Al0.3Ga0.7As/Al0.05Ga0.95As light‐emitting diodes on GaAs‐coated Si substrates grown by liquid phase epitaxy

4. Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates

5. Characteristics of GaAs/AlGaAs heterostructures grown by liquid‐phase epitaxy on molecular‐beam‐coated GaAs on Si

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1. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015

2. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

3. Selectively-grown InGaP/GaAs on silicon heterostructures for application to photovoltaic–photoelectrolysis cells;Journal of Crystal Growth;2001-05

4. Crystal growth of high quality hybrid GaAs heteroepitaxial layers on Si substrate by metalorganic chemical vapor deposition and liquid phase epitaxy;Journal of Crystal Growth;1998-08

5. Supercritical supersaturations and ultrafast cooling of the growth solution in liquid-phase epitaxy of semiconductors;Semiconductor Science and Technology;1996-04-01

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