Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs‐coated silicon by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98298
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1. AlGaAs/GaAs stripe laser diodes fabricated on Si substrates by MOCVD
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4. Performance of quarter‐micron GaAs metal‐semiconductor field‐effect transistors on Si substrates
5. MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers
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3. 10.1295/kobunshi.48.944;Kobunshi;1999
4. Liquid-phase epitaxial lateral overgrowth of GaAs on 0.3 °-misoriented epitaxial Si substrates;Materials Chemistry and Physics;1995-12
5. Heteroepitaxial Growth of GaAs on (100) GaAs and InP by Selective Liquid Phase Epitaxy;Japanese Journal of Applied Physics;1994-10-15
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