Near-equilibrium LPE growth of In1−xGaxAsyP1−y lattice matched to InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
2. GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE Apparatus
3. Growth and characterization of InGaAsP–InP lattice‐matched heterojunctions
4. Near‐equilibrium LPE growth of low threshold current density In1−xGaxAsyP1−y(λ=1.35 μm) DH lasers
5. Growth of Lattice-Matched InGaAsP/InP Double-Heterostructures by the Two-Phase Supercooled Solution Technique
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. LPE growth and characterization of InP/InGaAsP ridge-waveguide lasers at 1.3 μm-wavelength;Crystal Research and Technology;1990-06
2. Preparation and characterization of in1?xGaxAsyP1?y epilayers by liquid-phase epitaxy;Journal of Materials Science;1989-03
3. Application of tie-line concept on the liquid phase epitaxial growth of GaInAsP on InP;Journal of Crystal Growth;1988-10
4. Reproducible liquid phase epitaxial growth of InGaAsP buried heterostructure lasers;Applied Physics Letters;1987-11-02
5. 1.55‐μm InGaAsP ridge waveguide distributed feedback laser;Applied Physics Letters;1984-12
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