Photo-assisted metalorganic vapor-phase epitaxy for nitrogen doping and fabrication of blue-green light emitting devices of ZnSe-based semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
2. Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping
3. Blue‐green laser diodes
4. Metalorganic vapor phase epitaxy of low‐resistivityp‐type ZnSe
5. Bound-Exciton and Edge-Emission Spectra Associated with Li and Na Acceptors in ZnSe
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2. ZnSe growth by radical assisted MOCVD using hollow cathode plasma;Thin Solid Films;2000-06
3. On the Determination of Charge Profiles in Epitaxial Layers of ZnSe by Capacitance Measurements;Journal of Electronic Materials;1998-05
4. Growth of p-type Zn(S)Se layers by MOVPE;Journal of Crystal Growth;1998-02
5. Photoassisted growth and nitrogen doping of ZnSe;Journal of Crystal Growth;1997-01
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