Iodine doping in ZnSe films grown by vapor phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Low Temperature Vapor Phase Epitaxy of Undoped ZnSe Films on (100) GaAs Using Metallic Zn and Se
2. Vapor Phase Epitaxial Growth of Highly ConductiveP-Type ZnSe Films with Codoping of P and Li
3. PL and SIMS of vapor phase epitaxial ZnSe films
4. Characteristics of Cl‐doped ZnSe layers grown by molecular‐beam epitaxy
5. Use of Ethyliodide in Preparation of Low-Resistivity n-Type ZnSe by Metalorganic Vapor Phase Epitaxy
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1. Manipulating light emission of quantum dots by simultaneously controlling crystal morphology and doping;RSC Adv.;2014
2. Initial growth stage evaluation of high quality ZnSe films deposited on glass substrate;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-05
3. True Blue Inorganic Optoelectronic Devices;Advanced Materials;2000-06
4. Metalorganic vapor phase epitaxy of II–VI materials for visible light emitters;Journal of Crystal Growth;1996-09
5. Growth of iodine‐doped ZnS0.07Se0.93disordered alloys and electron mobility enhancement by ordered structures in (ZnS)3(ZnSe)42;Journal of Applied Physics;1996-07
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