ZnSe epitaxial growth by the temperature difference method under controlled vapor pressure (TDM-CVP) using Se solvent
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Blue light emission from ZnSep‐njunctions
2. Properties of Sn‐doped GaAs
3. Nonstoichiometry of Te-Doped GaAs
4. Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressure
5. Proc. 13th Conf. on Solid State Devices;Aoki,1981
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