Realization of mirror surface in (111)- and (110)-oriented GaAs by migration-enhanced epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
2. Orientation dependence of valence‐subband structures in GaAs‐Ga1−xAlxAs quantum‐well structures
3. On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende‐on‐diamond systems
4. Initial Growth Mechanism of GaAs on Si(110)
5. The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tuning performance: strain modulation of GaAs layers grown on meso-porous silicon substrates;Journal of Materials Science: Materials in Electronics;2024-06
2. GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates;Crystals;2022-12-24
3. Silicon-Doped Epitaxial Films Grown on GaAs(110) Substrates: the Surface Morphology, Electrical Characteristics, and Photoluminescence Spectra;Semiconductors;2020-11
4. Study of the Surface Morphology, Electrophysical Characteristics, and Photoluminescence Spectra of GaAs Epitaxial Films on GaAs(110) Substrates;Optics and Spectroscopy;2020-07
5. The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene;Scientific Reports;2020-01-21
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3