Initial growth stage of InAs/GaAs studied by RHEED-TRAXS method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Chemical Analysis of Surface by Fluorescent X-Ray Spectroscopy Using RHEED-SSD Method
2. Chemical Analysis of Surfaces by Total-Reflection-Angle X-Ray Spectroscopy in RHEED Experiments (RHEED-TRAXS)
3. A study of adsorption and desorption processes of Ag on Si(111) surface by means of RHEED-TRAXS
4. Backside‐illuminated InAs1−xSbx‐InAs narrow‐band photodetectors
5. In1−xGaxAs‐GaSb1−yAsyheterojunctions by molecular beam epitaxy
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2. Increased size uniformity through vertical quantum dot columns;Journal of Crystal Growth;1997-05
3. Depth-dependent non-destructive analysis of thin overlayers using total-reflection-angle X-ray spectroscopy;Applied Surface Science;1996-07
4. Evidence of two‐species nucleation of InAs islands on (100) and (111)B GaAs substrates;Applied Physics Letters;1996-02-12
5. Critical thickness of InAs grown on misoriented GaAs substrates;Journal of Applied Physics;1995-12
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