Accurate measurement of MBE substrate temperature

Author:

Lee W.S.,Yoffe G.W.,Schlom D.G.,Harris J.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. In-situ control of molecular beam epitaxial growth by spectral reflectivity analysis;Journal of Crystal Growth;2021-03

2. Temperature monitoring of narrow bandgap semiconductors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03

3. Growth control of epitaxial GeTe–Sb2Te3 films using a line-of-sight quadrupole mass spectrometer;Journal of Crystal Growth;2014-06

4. Short wavelength band edge thermometry during molecular beam epitaxial growth of GaN on SiC substrates and detected adatom self-heating effects;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05

5. Substrate temperature reference using SiC absorption edge measured by in situ spectral reflectometry;Journal of Crystal Growth;2003-02

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