Vapour epitaxial growth and characterization of InAs1-P
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. GaAs-Cs: A new type of photoemitter
2. Optimization of the InAsxP1−x–Cs2O Photocathode
3. QUANTUM YIELD OF GaAs SEMITRANSPARENT PHOTOCATHODE
4. The Preparation and Properties of Vapor-Deposited Epitaxial InAs[sub 1−x]P[sub x] Using Arsine and Phosphine
5. The preparation of high purity epitaxial InP
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrodeposition of In + As thin film alloys and their conversion to InAsxP1−x by PH3 treatment;Journal of Electroanalytical Chemistry;1996-11
2. References;Thin Films by Chemical Vapour Deposition;1990
3. Electron transport in direct-gap III-V ternary alloys;Journal of Physics C: Solid State Physics;1981-02-28
4. Vapor phase epitaxial growth of InGaAs/InAsP heterojunctions for long wavelength transferred electron photocathodes;Journal of Crystal Growth;1980-10
5. Velocity‐field relationship of InAs‐InP alloys including the effects of alloy scattering;Applied Physics Letters;1976-04-15
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