Contamination of CdS heteroepitaxial layers during vapour growth on GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Crystal Growth;van Dijk,1967
2. Vapor‐Deposited, Thin‐Film Heterojunction Diodes
3. Crystal Growth;Weinstein,1967
4. The epitaxial growth of cadmium sulphide on gallium arsenide substrates
5. Crystallographic Orientations and Interfacial Mismatches of Single‐Crystal CdS Films Deposited on Various Faces of Zinc‐Blende‐Type Materials
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1. Structural characterisation of CdS layers deposited on porous p-type GaAs;Microelectronics Journal;2007-01
2. References;Thin Films by Chemical Vapour Deposition;1990
3. Growth of cadmium sulphide thin film by open tube chemical vapour transport method;Crystal Research and Technology;1987-10
4. Heteroepitaxial growth of ZnSe by a close-spaced technique: Ga incorporation and morphology;Journal of Crystal Growth;1983-10
5. Vapor deposition of thin cadmium sulfide layers using thermal decomposition of dithiolatocadmium complexes;Journal of Crystal Growth;1980-10
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