Molecular beam epitaxial growth and characterization of ZnTe and CdTe on (001) GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Growth of Cd1−xZnxTe by molecular beam epitaxy
2. Structural properties of epitaxial layers of CdTe, ZnCdTe and HgCdTe
3. Heteroepitaxial growth of ZnCdTe by molecular beam epitaxy
4. Surface stoichiometry and reaction kinetics of molecular beam epitaxially grown (001) CdTe surfaces
5. Molecular beam epitaxial growth of a novel strained layer type III superlattice system: HgTe‐ZnTe
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1. Epitaxial growth of thin films and quantum structures of II–VI visible-bandgap semiconductors;Molecular Beam Epitaxy;2013
2. Growth of Hg1−x(Cd1−yZny)xTe epilayers on (100) Cd1−yZnyTe/GaAs substrates by ISOVPE;Materials Science and Engineering: B;1999-12
3. Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE;SPIE Proceedings;1999-11-04
4. Growth and Evaluation of Cd1-yZnyTe Epilayers on (100) GaAs Substrates by Hot Wall Epitaxy;Japanese Journal of Applied Physics;1998-10-15
5. Effect of CdTe Layer Thickness on Hg1-xCdxTe Epilayer Growth by Isothermal Vapor Phase Epitaxy Using (100) CdTe/GaAs Substrates and Void Formation at the Interface;Japanese Journal of Applied Physics;1998-07-15
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