Growth and Evaluation of Cd1-yZnyTe Epilayers on (100) GaAs Substrates by Hot Wall Epitaxy-Reference-Cited by-同舟云学术

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Growth and Evaluation of Cd1-yZnyTe Epilayers on (100) GaAs Substrates by Hot Wall Epitaxy

Published:1998-10-15 Issue:Part 1, No. 10 Volume:37 Page:5674-5679
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Koo Bonheun,Wang Jifeng,Ishikawa Yukio,Isshiki Minoru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-step growth of Cd0.96Zn0.04Te/Si(111) epilayers by HWE;Materials Letters;2006-05

2. Electrochemical growth of CdZnTe thin films;Materials Letters;2005-12

3. Growth of Hg_1-x(Cd_1-yZn_y)_xTe on Si(111) by Isothermal Vapor Phase Epitaxy;Materials Science Forum;2005-01

4. Growth and strain investigation of Cd0.96Zn0.04Te/GaAs by hot-wall epitaxy;Materials Chemistry and Physics;2003-06

5. The growth of the CdxZn1−xTe epilayers by low-pressure metalorganic vapor-phase epitaxy;Thin Solid Films;2003-04

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