A comparison of the structure of CdTe and (Hg, Cd)Te layers grown by MOVPE on {111}A and {111}B CdTe substrates-Reference-Cited by-同舟云学术

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A comparison of the structure of CdTe and (Hg, Cd)Te layers grown by MOVPE on {111}A and {111}B CdTe substrates

Published:1988-01 Issue:1-4 Volume:86 Page:516-521
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hails J.E.,Russell G.J.,Brown P.D.,Brinkman A.W.,Woods J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. The growth by MOVPE and characterisation of CdxHg1−xTe

2. Metalorganic growth of high‐purity HgCdTe films

3. Study of mercury cadmium telluride epilayers grown by metalorganic vapor‐phase epitaxy

4. A new MOVPE technique for the growth of highly uniform CMT

5. Proc. 1985 US Workshop on the Physics and Chemistry of Mercury Cadmium Telluride,1986

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2. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications;Sensors;2009-05-12

3. Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals;Applied Physics A;2008-01-25

4. MOVPE of II–VI materials;Progress in Crystal Growth and Characterization of Materials;1997-01

5. Metal-organic vapour phase epitaxy;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997

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