Carrier recombination in p-Hg0.8Cd0.2Te and n-Hg0.7Cd0.3Te
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Calculation of intrinsic carrier concentration in Hg1−xCdxTe
2. Recombination mechanisms in 8–14‐μ HgCdTe
3. Calculation of the Auger lifetime inp‐type Hg1‐xCdxTe
4. Experimental determination of minority‐carrier lifetime and recombination mechanisms inp‐type Hg1−xCdxTe
5. Statistics of the Recombinations of Holes and Electrons
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of isochronal annealing on CdTe and the study of electrical properties of AuCdTe Schottky devices;Canadian Journal of Physics;2003-03-01
2. Acceptor level determination by carrier freezeout in reverse‐biased Hg0.8Cd0.2Te photodiodes;Journal of Applied Physics;1996-07
3. Recombination and ionization in narrow gap semiconductors;Physics Reports;1995-06
4. Influence of SiO2 surface passivation on carrier lifetimes in n-type Hg0.7Cd0.3Te;Journal of Materials Science: Materials in Electronics;1994-02
5. Analysis of dark current in IR detectors on thinned p-type HgCdTe;IEEE Transactions on Electron Devices;1990
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