Vapor phase epitaxial growth of InP-based compound semiconductor materials
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Determination of the velocity/field characteristic for n type indium phosphide from dipole-domain measurements
2. Temperature dependence of the velocity/field characteristic of electrons in InP
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3. Spatial Variations in the Epitaxial Growth of InP and InGaAs by Trichloride VPE and Their Physical and Chemical Origins;Journal of The Electrochemical Society;1992-04-01
4. Surface characterization study of InP(100) substrates using ion-scattering spectroscopy, Auger electron spectroscopy and electron spectroscopy for chemical analysis I: Comparison of substrate-cleaning techniques;Thin Solid Films;1991-03
5. References;Thin Films by Chemical Vapour Deposition;1990
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