Growth and characterization of compound semiconductors by atomic layer epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. T. Suntola and M.J. Antson, US Patent No. 4-058-430 (1977).
2. Characterization of surface exchange reactions used to grow compound films
3. Molecular Layer Epitaxy
4. Atomic layer epitaxy of III‐V binary compounds
5. Electronic Materials Conf.;Tischler,1985
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