In-situ observation of LEC GaAs solid-liquid interface with newly developed X-ray image processing system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Liquid encapsulated Czochralski growth of 35 mm diameter single crystals of GaP
2. Cross-sectional resistivity variations in germanium single crystals
3. Striations in Undoped Semi-Insulating LEC GaAs
4. Diameter control of lec grown GaP crystals
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1. Computational modeling and neutron imaging to understand interface shape and solute segregation during the vertical gradient freeze growth of BaBrCl:Eu;Journal of Crystal Growth;2020-04
2. The effect of interface shape on anisotropic thermal stress of bulk single crystal during Czochralski growth;Journal of Crystal Growth;1997-04
3. Laser ultrasonic studies of solid–liquid interfaces;The Journal of the Acoustical Society of America;1997-02
4. Characterization of lattice spacing and inclination around cells in liquid‐encapsulated Czochralski GaAs crystals using a 100×100 μm2incident x‐ray beam;Journal of Applied Physics;1996-08
5. Unsteady thermoelastic analysis of dislocation generation during Czochralski crystal growth;Journal of Crystal Growth;1995-04
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