OMVPE-grown (AlxGa1−x)0.5In0.5P/InGaAs MODFET structures: growth procedure and Hall properties
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Heterostructure bipolar transistors and integrated circuits
2. Band lineup for a GaInP/GaAs heterojunction measured by a high‐gainNpnheterojunction bipolar transistor grown by metalorganic chemical vapor deposition
3. Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVD
4. High speed non-selfaligned GaInP/GaAs-TEBT
5. Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low temperature growth and characterization of silicon delta doped GaInP/GaInAs/GaAs pseudomorphic heterostructures for use in high electron mobility transistors;Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors;1997
2. GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE: design, fabrication, and device results;IEEE Transactions on Electron Devices;1996-10
3. MOVPE growth of III–V compounds for optoelectronic and electronic applications;Microelectronics Journal;1996-07
4. Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures;Journal of Electronic Materials;1995-11
5. Growth of high-quality InGaP and application for modulation-doped structure by molecular beam epitaxy with a GaP source;Journal of Crystal Growth;1995-05
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