Growth of high-quality InGaP and application for modulation-doped structure by molecular beam epitaxy with a GaP source
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
3. Plasma and wet chemical etching of In0.5Ga0.5P
4. Molecular‐beam epitaxial growth of InP homoepitaxial layers and their electrical and optical properties
5. Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P
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1. InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source;Solid State Communications;2006-04
2. InGaP/GaAs HBT grown by solid-source molecular-beam epitaxy with a GaP decomposition source;SPIE Proceedings;2004-03-30
3. Properties of InGaP/GaAs Grown by Solid-Source Molecular Beam Epitaxy with a GaP Decomposition Source;Chinese Physics Letters;2003-08-29
4. Growth of device quality InGaP/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine;Solid-State Electronics;1999-08
5. Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In0.48Ga0.52P on GaAs;Japanese Journal of Applied Physics;1999-02-15
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