Diffusion of arsenic in epitaxial CdxHg1−xTe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Group V acceptor doping of CdxHg1−xTe layers grown by metal-organic vapour phase epitaxy
2. Long and middle wavelength infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular‐beam epitaxy
3. Arsenic diffusion effects in CdxHg1-xTe layers grown by metal-organic vapour phase epitaxy
4. Defects, diffusion and activation in ion implanted HgCdTe
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1. HgCdTe LWIR p-on-n photodiodes formed by arsenic diffusion from the vapor phase;Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon;2010-08-19
2. P-type doping of double layer mercury cadmium telluride for junction formation;Journal of Electronic Materials;1995-05
3. Diffusion in mercury cadmium telluride—an update;Journal of Electronic Materials;1995-05
4. The diffusion of arsenic in Hg0.8Cd0.2Te;Semiconductor Science and Technology;1994-09-01
5. Kinetic study of the ISOVPE process of HgCdTe films;Materials Chemistry and Physics;1994-04
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