The diffusion of arsenic in Hg0.8Cd0.2Te
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/9/i=9/a=025/pdf
Reference9 articles.
1. Mechanisms of incorporation of donor and acceptor dopants in (Hg,Cd)Te alloys
2. A review of impurity behavior in bulk and epitaxial Hg1−xCdxTe
3. Diffusion of arsenic in epitaxial CdxHg1−xTe
4. Influence of Hg pressure on diffusion coefficient of As in HgCdTe
5. Dynamics of arsenic diffusion in metalorganic chemical vapor deposition HgCdTe on GaAs/Si substrates
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1. Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes;Journal of Electronic Materials;2010-03-26
2. Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation;Journal of Electronic Materials;2009-06-05
3. Activation kinetics of the As acceptor in HgCdTe;Journal of Materials Science: Materials in Electronics;2007-04-21
4. The effect of built-in electric field on As diffusion in HgCdTe graded-band-gap epitaxial layers;Thin Solid Films;2004-07
5. High temperature arsenic doping of CdHgTe epitaxial layers;Crystal Research and Technology;2004-01
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