The diffusion of arsenic in Hg0.8Cd0.2Te

Author:

Shaw D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes;Journal of Electronic Materials;2010-03-26

2. Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation;Journal of Electronic Materials;2009-06-05

3. Activation kinetics of the As acceptor in HgCdTe;Journal of Materials Science: Materials in Electronics;2007-04-21

4. The effect of built-in electric field on As diffusion in HgCdTe graded-band-gap epitaxial layers;Thin Solid Films;2004-07

5. High temperature arsenic doping of CdHgTe epitaxial layers;Crystal Research and Technology;2004-01

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