Influence of Hg pressure on diffusion coefficient of As in HgCdTe-Reference-Cited by-同舟云学术

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Influence of Hg pressure on diffusion coefficient of As in HgCdTe

Published:1993-08 Issue:8 Volume:22 Page:1033-1037
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Chandra D.,Goodwin M. W.,Chen M. C.,Dodge J. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02817521.pdf

Reference15 articles.

1. L.O. Bubulac and C.R. Viswanathan,Appl. Phys. Lett. 60, 222 (1992).

2. H.R. Vydyanath,J. Electrochem. Soc. 128, 2609 (1981).

3. W. Jost,Diffusion in Solids, Liquids and Gases, Academic, New York, 1962.

4. B.I. Boltaks,Diffusion in Semiconductors, Academic, New York, 1963.

5. S.K. Gandhi,The Theory and Practice of Microelectronics, John Wiley and Sons, New York, 1968.

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1. Diffusion Mechanism for Arsenic in Intrinsic and Extrinsic Conditions in HgCdTe;Journal of Electronic Materials;2017-06-15

2. Infrared photoluminescence of arsenic-doped HgCdTe in a wide temperature range of up to 290 K;Journal of Applied Physics;2011-08-15

3. Activation kinetics of the As acceptor in HgCdTe;Journal of Materials Science: Materials in Electronics;2007-04-21

4. Growth of very low arsenic-doped HgCdTe;Journal of Electronic Materials;2005-06

5. The effect of built-in electric field on As diffusion in HgCdTe graded-band-gap epitaxial layers;Thin Solid Films;2004-07

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