Effect of additional HCl injection on growth and doping in the In-PH3-HCl-H2 system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Vapour phase growth of InP from the In-PH3-HCl-H2 system
2. Suppression of extraneous wall deposition by HCl injection in hydride vapor phase epitaxy of III–V semiconductors
3. The effect of a continuous etch on the growth rate and morphology of InP prepared by the vapor phase epitaxial-hydride method
4. The role of vapour etching in the growth of epitaxial InP
5. Modeling of Sulfur Incorporation during Low Pressure CVD of GaAs (100) in the Ga ‐ HCl ‐ AsH3 ‐ H 2 ‐ H 2 S System
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chemical aspects of the effect of impurities in crystal growth;Progress in Crystal Growth and Characterization of Materials;1996-01
2. Hydride-VPE growth of InP and SI InP: Fe in H2/N2 ambient;Journal of Crystal Growth;1993-03
3. Chapter 2 High Purity InP Grown by Hydride Vapor Phase Epitaxy;Semiconductors and Semimetals;1990
4. GaInAs/InP heterostructures with improved homogeneity;Journal of Crystal Growth;1986-12
5. Sulfur incorporation during epitaxial growth of inp in the IN-HC1-PH3-H2 system;Journal of Electronic Materials;1985-11
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