Extremely uniform growth of GaAs and GaAlAs by low pressure metalorganic chemical vapor deposition on three-inch GaAs substrates-Reference-Cited by-同舟云学术

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Extremely uniform growth of GaAs and GaAlAs by low pressure metalorganic chemical vapor deposition on three-inch GaAs substrates

Published:1984-12 Issue:1-2 Volume:70 Page:140-144
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Okamoto A.,Sunakawa H.,Terao H.,Watanabe H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. 14th Intern. Conf. on Solid State Devices;Matsuda,1982

2. Metalorganic Chemical Vapor Deposition

3. Studies of GaAs and AlGaAs layers grown by OM-VPE

4. GaAs and Related Compounds 1982;Cox,1983

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2. Specific Materials;Organometallic Vapor-Phase Epitaxy;1999

3. Methods to improve the P/As compositional uniformity of InGaAsP thin films prepared by MOCVD;Journal of Crystal Growth;1996-10

4. Low threshold λ = 1.3 μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursors;Journal of Crystal Growth;1994-12

5. A New Computer Model of the MOCVD Process, The Active Species Concentrations in a Horizontal Reactor;Physica Status Solidi (a);1992-02-16

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