Lanthanum-stimulated high-temperature whisker growth of α-SiC-Reference-Cited by-同舟云学术

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Lanthanum-stimulated high-temperature whisker growth of α-SiC

Published:1972-02 Issue:2 Volume:12 Page:97-105
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Verspui G.,Knippenberg W.F.,Bootsma G.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Silicon Carbide, A High Temperature Semiconductor;Hamilton,1960

2. Studies of Silicon Carbide;Kroko,1966

3. Relation between Growth Temperature and the Structure of SiC Crystals Grown by Sublimation Method

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4. Effect of La₂O₃ Content on Mechanical Properties and Toughened Mechanics of SiC Nanowires Toughened C_w/SiC Composites;Materials Science Forum;2010-05

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