Surface diffusion effects in MBE growth of QWs on channeled substrate (100) GaAs for lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Patterned quantum well semiconductor injection laser grown by molecular beam epitaxy
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4. Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasers
5. Plane-selective doped AlGaAs/GaAs double heterostructure light emitting diodes
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1. A numerical simulation model for molecular-beam epitaxial (MBE) growth on nonplanar surfaces;Journal of Crystal Growth;1999-08
2. Single-mode operation in an antiguided vertical-cavity surface-emitting laser using a low-temperature grown AlGaAs dielectric aperture;IEEE Photonics Technology Letters;1998-08
3. Fabrication of InP-based InGaAs ridge quantum wires utilizing selective molecular beam epitaxial growth on (311)A facets;Journal of Electronic Materials;1996-05
4. Monte carlo simulation of the growth of semiconductor quantum wires;Materials Science and Engineering: B;1996-02
5. Monte Carlo simulation of the growth of semiconductor quantum wires;C,H,N and O in Si and Characterization and Simulation of Materials and Processes;1996
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